參數(shù)資料
型號(hào)： APTGF100DU120T
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 150 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-12
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 301K
代理商： APTGF100DU120T
APTGF100DU120T
A
PT
G
F100D
U
120T
–
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
1- 6
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C2
Q2
NTC1
Q1
E
C1
E1
G1
NTC2
E2
G2
C1
C2
NTC2
NTC1
E1
E
G2
E2
G2
E2
G1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
150
IC
Continuous Collector Current
Tc = 80°C
100
ICM
Pulsed Collector Current
Tc = 25°C
300
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
568
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
300A @ 1200V
VCES = 1200V
IC = 100A @ Tc = 80°C
Dual common source
NPT IGBT Power Module
相關(guān)PDF資料
PDF描述
APTGF100DU120T 150 A, 1200 V, N-CHANNEL IGBT
APTGF100SK120T 150 A, 1200 V, N-CHANNEL IGBT
APTGF100SK120T 150 A, 1200 V, N-CHANNEL IGBT
APTGF10X120E2 15 A, 1200 V, N-CHANNEL IGBT
APTGF10X120P2 15 A, 1200 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF100DU120TG 功能描述:IGBT MODULE NPT DUAL 1200V SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF100SK120T 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module
APTGF100SK120TG 功能描述:IGBT 1200V 135A 568W SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF10X120E2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF10X120E2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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