參數(shù)資料
型號： APTC90TDUM60TPG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 59 A, 900 V, 0.06 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SP6-P, 23 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 224K
代理商： APTC90TDUM60TPG
APTC90TDUM60TPG
APT
C
90T
DUM
60T
PG
–
Rev
0
August,
200
9
www.microsemi.com
1 – 5
G6
S6
G5
S5
S5/S6
D5
D6
G4
S4
S2
G2
G3
S3
G1
D1
S1/S2
S3/S4
D2
D4
NT
C
2
NT
C
1
D3
S1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
900
V
Tc = 25°C
59
ID
Continuous Drain Current
Tc = 80°C
44
IDM
Pulsed Drain current
150
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
60
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
462
W
IAR
Avalanche current (repetitive and non repetitive)
8.8
A
EAR
Repetitive Avalanche Energy
2.9
EAS
Single Pulse Avalanche Energy
1940
mJ
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
Triple dual Common Source
Super Junction MOSFET
Power Module
VDSS = 900V
RDSon = 60mΩ max @ Tj = 25°C
ID = 59A @ Tc = 25°C
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相關(guān)代理商/技術(shù)參數(shù)
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