- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36729 > APTC90DDA12CT1G (MICROSEMI POWER PRODUCTS GROUP) 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTC90DDA12CT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 221K |
| 代理商： | APTC90DDA12CT1G |
APTC90DDA12CT1G
APT
C
90DDA12CT
1G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
6 – 6
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.4
0.8
1.2
1.6
2
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lI
m
pedanc
e
(°
C/
W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
5
10
15
20
0
0.5
11.5
22.5
33.5
VF Forward Voltage (V)
I F
For
ward
Curr
ent
(
A
)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
25
50
75
100
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
I R
R
e
verse
Current
(
A)
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
1
10
100
1000
VR Reverse Voltage
C,
Capa
citanc
e
(pF)
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| APTC90H12SCTG | 30 A, 900 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90HM60T3G | 59 A, 900 V, 0.06 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTCV40H60CT1G | IGBT |
| APTCV50H60T3G | 80 A, 600 V, N-CHANNEL IGBT |
| APTGF100A120T | 150 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC90DDA12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90DSK12CT1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual buck chopper Super Junction MOSFET SiC chopper diode |
| APTC90DSK12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90H12SCTG | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC90H12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。