參數(shù)資料
型號： APTC60AM70T1G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 322K
代理商： APTC60AM70T1G
APTC60AM70T1G
APT
C
60AM70T1G
–
Re
v0
A
ugus
t,200
7
www.microsemi.com
1 – 6
1
8
7
Q1
Q2
56
3
4
11
NTC
12
9
10
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
39
ID
Continuous Drain Current
Tc = 80°C
29
IDM
Pulsed Drain current
160
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
70
m
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 70m max @ Tj = 25°C
ID = 39A @ Tc = 25°C
相關(guān)PDF資料
PDF描述
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