參數(shù)資料
型號： APT80GA90B2D40
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 145 A, 900 V, N-CHANNEL IGBT, TO-247AD
封裝： ROHS COMPLIANT, TO-247, TMAX-3
文件頁數(shù)： 1/5頁
文件大?。?/td> 160K
代理商： APT80GA90B2D40
052-6348
Rev
A
5
-
2008
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
V
ces
Collector Emitter Voltage
900
V
I
C1
Continuous Collector Current @ T
C = 25°C
145
A
I
C2
Continuous Collector Current @ T
C = 100°C
80
I
CM
Pulsed Collector Current 1
239
V
GE
Gate-Emitter Voltage 2
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
625
W
SSOA
Switching Safe Operating Area @ T
J = 150°C
239A @ 900V
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Combi (IGBT and Diode)
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
High power PFC boost
Welding
UPS, solar, and other inverters
High frequency, high efciency industrial
FEATURES
Fast switching with low EMI
Very Low E
off
for maximum efciency
Ultra low C
res
for improved noise immunity
Low conduction loss
Low gate charge
Increased intrinsic gate resistance for low EMI
RoHS compliant
APT80GA90B2D40
APT80GA90LD40
900V
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E
off is achieved
through leading technology silicon design and lifetime control processes. A reduced E
off -
V
CE(ON) tradeoff results in superior efciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of C
res/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
V
GE = 0V, IC = 1.0mA
900
V
CE(on)
Collector-Emitter On Voltage
V
GE = 15V,
I
C = 47A
T
J = 25°C
2.5
3.1
T
J = 125°C
2.2
V
GE(th)
Gate Emitter Threshold Voltage
V
GE =VCE , IC = 1mA
3
4.5
6
I
CES
Zero Gate Voltage Collector Current
V
CE = 900V,
V
GE = 0V
T
J = 25°C
350
μA
T
J = 125°C
1500
I
GES
Gate-Emitter Leakage Current
V
GS = ±30V
±100
nA
APT80GA90LD40
APT80GA90B2D40
相關(guān)PDF資料
PDF描述
APT901R6BN 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT901RBN 11 A, 900 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT97H50J 97 A, 500 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET
APTC60AM24T1G 95 A, 600 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60DAM24CT1G 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT80GA90LD40 功能描述:IGBT 900V 145A 625W TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 8™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT80GA90S 制造商:Microsemi Corporation 功能描述:APT80GA90S - Rail/Tube
APT80GP60B2 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) T-MAX
APT80GP60B2G 功能描述:IGBT 600V 100A 1041W TMAX RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT80GP60J 功能描述:IGBT 600V 151A 462W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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