參數(shù)資料
型號： APT8075BVFR
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 65K
代理商： APT8075BVFR
DYNAMIC CHARACTERISTICS
APT8075BVFR
050-5632
Rev
-
1-2005
THERMAL CHARACTERISTICS
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6
UNIT
pF
nC
ns
MIN
TYP
MAX
12
48
1.3
18
Tj = 25°C
160
250
Tj = 125°C
305
525
Tj = 25°C
1.8
Tj = 125°C
6.0
Tj = 25°C
11
Tj = 125°C
18
MIN
TYP
MAX
2600
3120
270
380
135
200
130
195
13
20
66
100
12
24
11
22
45
70
816
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.48
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 4.16mH, RG = 25, Peak IL = 25A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS - -ID [Cont.], di/dt = 100A/s, VDD - VDSS, Tj - 150°C, RG = 2.0,
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料
PDF描述
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