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參數(shù)資料
| 型號： | APT8052SLL |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 800 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 160K |
| 代理商： | APT8052SLL |
APTGF180A60TG
A
P
T
G
F
180
A
60T
G
–
R
ev
2
J
ul
y,
2006
www.microsemi.com
4 - 6
Typical Performance Curve
Output characteristics (VGE=15V)
T
J=-55°C
T
J=25°C
T
J=125°C
0
100
200
300
400
500
600
012
34
Ic
,C
o
lle
ct
o
r
C
u
rr
en
t(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J=-55°C
T
J=25°C
T
J=125°C
0
100
200
300
400
500
600
0123456789
10
VGE, Gate to Emitter Voltage (V)
Ic
,C
o
lle
ct
o
rC
u
rr
en
t(
A
)
250s Pulse Test
< 0.5% Duty cycle
Ic=360A
Ic=180A
Ic=90A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
VGE, Gate to Emitter Voltage (V)
V
CE
,Co
lle
ct
o
r
to
E
m
it
te
rV
o
lt
ag
e
(
V
)
On state Voltage vs Gate to Emitter Volt.
T
J = 25°C
250s Pulse Test
< 0.5% Duty cycle
Ic=360A
Ic=180A
Ic=90A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
V
CE
,C
o
lle
c
to
rt
o
E
m
it
te
r
V
o
lt
ag
e(
V
)
On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
C
o
lle
c
to
rt
o
E
m
it
te
rB
re
ak
dow
n
V
o
lt
a
g
e(
N
o
rm
aliz
e
d
)
Breakdown Voltage vs Junction Temp.
0
50
100
150
200
250
300
-50 -25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
Ic
,
D
C
Co
lle
ct
o
rCu
rr
en
t
(A
)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
V
CE =300V
V
CE =480V
0
2
4
6
8
10
12
14
16
18
0
100
200
300
400
500
600
700
Gate Charge (nC)
V
GE
,Ga
te
to
E
m
itte
rV
o
lt
ag
e(
V
)
I
C = 180A
T
J = 25°C
Output Characteristics (VGE=10V)
T
J=-55°C
TJ=25°C
T
J=125°C
0
100
200
300
400
500
600
01
234
Ic
,Co
lle
ct
o
rC
u
rr
e
n
t(
A
)
VCE, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT8056BVFR_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8056BVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT8056BVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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