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參數(shù)資料
| 型號： | APT64GA90S |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 117 A, 900 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, D3PAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 199K |
| 代理商： | APT64GA90S |
052-6325
Rev
C
6
-
2009
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Parameter
Ratings
Unit
V
ces
Collector Emitter Voltage
900
V
I
C1
Continuous Collector Current @ T
C = 25°C
117
A
I
C2
Continuous Collector Current @ T
C = 100°C
64
I
CM
Pulsed Collector Current 1
193
V
GE
Gate-Emitter Voltage 2
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
500
W
SSOA
Switching Safe Operating Area @ T
J = 150°C
193A @ 900V
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Single die IGBT
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
High power PFC boost
Welding
UPS, solar, and other inverters
High frequency, high efciency industrial
FEATURES
Fast switching with low EMI
Very Low E
off
for maximum efciency
Ultra low C
res
for improved noise immunity
Low conduction loss
Low gate charge
Increased intrinsic gate resistance for low EMI
RoHS compliant
APT64GA90B
APT64GA90S
900V
APT64GA90B
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E
off is achieved
through leading technology silicon design and lifetime control processes. A reduced E
off -
V
CE(ON) tradeoff results in superior efciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of C
res/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Symbol
Characteristic
Min
Typ
Max
Unit
R
θJC
Junction to Case Thermal Resistance
-
0.25
°C/W
W
T
Package Weight
-
5.9
-
g
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
10
inlbf
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
V
GE = 0V, IC = 1.0mA
900
V
CE(on)
Collector-Emitter On Voltage
V
GE = 15V,
I
C = 38A
T
J = 25°C
2.5
3.1
T
J = 125°C
2.2
V
GE(th)
Gate Emitter Threshold Voltage
V
GE =VCE , IC = 1mA
3
4.5
6
I
CES
Zero Gate Voltage Collector Current
V
CE = 900V,
V
GE = 0V
T
J = 25°C
250
μA
T
J = 125°C
1000
I
GES
Gate-Emitter Leakage Current
V
GS = ±30V
±100
nA
TO-247
D3PAK
APT64GA90S
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