參數(shù)資料
型號: APT60M80L2VFR
廠商: Advanced Power Technology Ltd.
英文描述: POWER MOS V FREDFET
中文描述: 功率MOS V FREDFET
文件頁數(shù): 5/5頁
文件大小: 171K
代理商: APT60M80L2VFR
0
Typical Performance Curves
APT60M80L2VFR
TO-264 MAX
TM
(L2VFR) Package Outline
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.76 (.030)
2.79 (.110)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
Switching Energy
I
D
D.U.T.
V
DS
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT60DF60
相關(guān)PDF資料
PDF描述
APT60M80L2VR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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