- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369365 > APT60GU30S (Advanced Power Technology Ltd.) POWER MOS 7 IGBT PDF資料下載
參數(shù)資料
| 型號： | APT60GU30S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 175K |
| 代理商： | APT60GU30S |
0
APT60GU30B_S
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
A
D.U.T.
APT15DS30
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
90%
Collector Current
0
90%
10%
t
f
Switching Energy
t
d(off)
T
J = 125 C
Gate Voltage
Collector Voltage
Collector Current
Collector Voltage
Gate Voltage
T
J
= 125 C
5 %
5%
10%
10%
td(on)
90%
tr
Switching Energy
15.95 (.628)
1.22 (.048)
5.45 (.215) BSC
4.98 (.196)
1.47 (.058)
2.67 (.105)
0.46 (.018)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
C
(
1.98 (.078)
Gate
Collector
Emitter
1.27 (.050)
11.51 (.453)
13.41 (.528)
Revised
1.04 (.041)
13.79 (.543)
4/18/95
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
3.50 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
C
Collector
Emitter
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
TO
-
247 Package Outline
D
3
PAK Package Outline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT60M90JN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT8067HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APTC60DDAM70T3 | Dual boost chopper Super Junction MOSFET Power Module |
| APTDF430U100 | Single diode Power Module |
| APTGF150DH120 | Asymmetrical - Bridge NPT IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60M60JFLL | 功能描述:MOSFET N-CH 600V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M60JFLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT60M60JLL | 功能描述:MOSFET N-CH 600V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT60M60JLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT60M75 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。