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參數(shù)資料
| 型號(hào)： | APT60GT60SR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | APT60GT60SR |
052-6223
Rev
C
11-2005
APT60GT60BR_SR
G
C
E
APT60GT60BR
APT60GT60SR
600V
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Thunderbolt IGBT
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
600
345
1.6
2.2
2.5
2.8
80
2000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Gate Threshold Voltage (VCE = VGE, IC = 500A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Gate Emitter Voltage
Continuous Collector Current @ TC = 25°C 4
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current RG = 11 TC = 25°C
Single Pule Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT60GT60BR_SR
600
±20
100
60
360
65
500
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
TO
-24
7
G
C
E
D3PAK
G
C
E
(B)
(S)
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