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參數(shù)資料
| 型號(hào)： | APT60GT60JR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的迅雷是IGBT的高壓電源IGBT的新一代。 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | APT60GT60JR |
THERMAL CHARACTERISTICS
SPECFCAION
Forward Transconductance
OBJECTVETECHNCAL
SPECFCAION
CE
= 20V, I
C
= I
C2
Symbol
C
oes
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
on
off
ts
t
d
(on)
t
r
t
d
(off)
t
f
ts
gfe
DYNAMIC CHARACTERISTICS
APT60GT60BR
UNIT
°
C/W
lbin
MIN
TYP
MAX
0.25
40
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
Θ
JC
R
Θ
JA
Torque
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Test Conditions
Capacitance
GE
= 0V
CE
= 25V
f = 1 MHz
Gate Charge
GE
= 15V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
GE
= 15V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150
°
C)
CLAMP
(Peak)
= 0.66V
CES
GE
= 15V
I
C
= I
C2
R
G
= 10
J
= +150
°
Inductive Switching (25
°
C)
CLAMP
(Peak)
= 0.66V
CES
GE
= 15V
I
C
= I
C2
R
G
= 10
J
= +25
°
MIN
TYP
MAX
3200
310
180
280
120
20
14
55
190
140
25
75
300
95
1.9
2.4
4.3
25
75
260
90
3.8
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
,
L = 100
μ
H, T
j
= 25
°
C
2
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60GT60JRD | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT60GT60JRDQ3 | 功能描述:IGBT 600V 105A 379W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT60GT60SRG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT60GU30B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT60GU30S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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