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參數(shù)資料
| 型號： | APT609RKVR |
| 英文描述： | Volts:600V RDS(ON)9Ohms ID(cont):1Amps|MOSFETs |
| 中文描述： | 電壓：600V的的RDS（ON）9Ohms身份證（續(xù)）：一安培| MOSFET的 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 70K |
| 代理商： | APT609RKVR |
15.49 (.610)
5.38 (.212)
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
Gate
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Drain
Source
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
D
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.76 (.030)
2.79 (.110)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
0
APT6010 B2FLL - LFLL
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
30,000
10,000
1,000
100
10
100
10
1
1
10
100
500
.01
.1
1
10
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
10mS
1mS
100μS
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
TJ =+150°C
TJ =+25°C
216
100
10
1
12
8
4
0
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