- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄362388 > APT6060BNR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 13A I(D) | TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | APT6060BNR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 13A I(D) | TO-247AD |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直|第13A條（?。﹟采用TO - 247AD |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | APT6060BNR |
15.49 (.610)
5.38 (.212)
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
Gate
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Drain
Source
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
D
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.76 (.030)
2.79 (.110)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
0
APT6010 B2FLL - LFLL
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
30,000
10,000
1,000
100
10
100
10
1
1
10
100
500
.01
.1
1
10
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
10mS
1mS
100μS
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
TJ =+150°C
TJ =+25°C
216
100
10
1
12
8
4
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6070BNR | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 13A I(D) | TO-247AD |
| APT609RKVR | Volts:600V RDS(ON)9Ohms ID(cont):1Amps|MOSFETs |
| APT60M75 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT60M75JFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT60D20 | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6060CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10.5A I(D) | TO-254ISO |
| APT6060DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | CHIP |
| APT6070AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10.5A I(D) | TO-3 |
| APT6070BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) | TO-247AD |
| APT6070BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 13A I(D) | TO-247AD |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。