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參數(shù)資料
| 型號： | APT6035SVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 121K |
| 代理商： | APT6035SVFR |
050-7269
Rev
A
7-2004
DYNAMIC CHARACTERISTICS
APT6035BVFR_SVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -18A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -18A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -18A, di/dt = 100A/s)
Peak Recovery Current
(IS = -18A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
18
72
1.3
15
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.8
Tj = 125°C
5.2
Tj = 25°C
11
Tj = 125°C
18
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.45
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 7.47mH, RG = 25, Peak IL = 18A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID18A
di/dt ≤ 700A/s V
R ≤600V
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 18A @ 25°C
V
GS = 15V
V
DD = 300V
I
D = 18A @ 25°C
R
G = 1.6
MIN
TYP
MAX
3450
4140
403
565
155
235
140
210
19
30
68
100
12
24
12
24
40
60
816
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關PDF資料 |
PDF描述 |
|---|---|
| APT6035SVFR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6035BVFRG | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6035BVFR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6035BVFR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6035SVFRG | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
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