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參數(shù)資料
| 型號(hào)： | APT6030SVRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | APT6030SVRG |
050-5517
Rev
B
5-2004
Typical Performance Curves
APT6030BVR_SVR
0
50
100
150
200
250
300
0
4
8
12
16
20
0
2468
0
8
16
24
32
40
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
I
D = 0.5 ID [Cont.]
V
GS = 10V
40
32
24
16
8
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
40
32
24
16
8
0
40
32
24
16
8
0
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
5V
VGS=5.5V, 6V, 10V & 15V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=6V, 10V & 15V
4V
4.5V
5V
5.5V
4V
NORMALIZED TO
V
GS = 10V @ 0.5 ID [Cont.]
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE2,TYPICALOUTPUTCHARACTERISTICS
FIGURE3,TYPICALOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6030SVR | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6030BVR | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6030BVR | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6033BN | 22 A, 600 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6030BN | 23 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6032AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6033BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6033BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD |
| APT6035 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6035AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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