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參數(shù)資料
| 型號(hào)： | APT6030SVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | APT6030SVR |
APT6030BVR_SVR
050-5517
Rev
B
5-2004
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline (BVR)
D
3PAK Package Outline (SVR)
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
2.40 (.094)
2.70 (.106)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
1
5
10
50 100
600
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC=+25°C
TJ=+150°C
SINGLE PULSE
100
50
10
5
1
0.5
0.1
20
16
12
8
4
0
OPERATIONHERE
LIMITEDBYRDS(ON)
TJ=+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=120V
VDS=480V
I
D = ID [Cont.]
10S
1mS
10mS
100mS
DC
100S
VDS=300V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,TYPICALCAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,TYPICALSOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
15,000
10,000
5,000
1,000
500
100
50
10
5
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6030BVR | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6030BVR | 21 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6033BN | 22 A, 600 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6030BN | 23 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6035BVR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6030SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT6032AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6033BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6033BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD |
| APT6035 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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