- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36723 > APT6030BN 23 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | APT6030BN |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 51K |
| 代理商： | APT6030BN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
050-6008
Rev
B
0
50
100
150
200
250
0
2
4
6
8
10
0
2
4
6
8
10
0
10
20
30
40
50
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT6030/6033BN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
20
16
12
8
4
0
40
32
24
16
8
0
24
20
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
8
4
0
2.50
2.00
1.50
1.00
0.50
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = 25°C
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
6V
5.5V
4.5V
5V
6.5V
VGS=10V
8V
7V
4.5V
5V
5.5V
6V
VGS=7, 8, &10V
6.5V
TJ = +125°C
TJ = +25°C
TJ = -55°C
TJ = +25°C
TJ = +125°C
APT6030BN
APT6033BN
VGS=20V
VGS=10V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6035BVR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6035BVRG | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6035BVR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6035SVFR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6035SVFR | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6030BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD |
| APT6030BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BVFR_05 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BVFRG | 功能描述:MOSFET N-CH 600V 21A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT6030BVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。