參數(shù)資料
型號： APT6028HLL
元件分類： JFETs
英文描述： 18 A, 600 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
封裝： HERMETIC SEALED, TO-258, 3 PIN
文件頁數(shù)： 4/5頁
文件大?。?/td> 89K
代理商： APT6028HLL
050-7336
Rev
-
3-2003
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
10,000
1,000
100
10
200
100
10
1
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
600
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
72
10
1
.1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=300V
VDS=120V
VDS=480V
I
D
= I
D
18A
TJ =+150°C
TJ =+25°C
Crss
Ciss
Coss
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
Typical Performance Curves
APT6028HLL
0
10203040
0
10
20
30
40
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35 40
45
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
V
DD
= 400V
I
D
= 24A
T
J
= 125°C
L = 100H
E
ON
includes diode
reverse recovery.
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes diode
reverse recovery.
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
相關(guān)PDF資料
PDF描述
APT6029BFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6029BFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6029SFLLG 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6029SFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6029SFLL 21 A, 600 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT6029BFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6029BFLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6029BFLLG 功能描述:MOSFET N-CH 600V 21A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT6029BLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6029BLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*