參數(shù)資料
型號(hào)： APT601R6KN
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.8A I(D) | TO-220
中文描述： 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 5.8AI（四）|至220
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 70K
代理商： APT601R6KN
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
0
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
μA
nA
Volts
MIN
TYP
MAX
600
54
0.100
250
1000
±100
3
5
APT6010
600
54
216
±30
±40
690
5.52
-55 to 150
300
54
50
3000
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)557 9215 15
FAX: (33)5 5647 9761
T-MAX
G
D
S
TO-264
B2FLL
LFLL
APT6010B2FLL
APT6010LFLL
600V
54A 0.100
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
and Q
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular
T-MAX
or TO-264 Package
FAST RECOVERY BODY DIODE
POWER MOS 7
TM
FREDFET
相關(guān)PDF資料
PDF描述
APT6030BNR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD
APT6030HJN TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 600V V(BR)DSS | 23A I(D)
APT6030SN TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-263AB
APT6033BNR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD
APT6039BNR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT6020B2VFR 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT6020LVFR 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT6020LVR 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6021BFLL 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6021BFLL_04 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*