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參數(shù)資料
| 型號： | APT6017WVR |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | JFETs |
| 英文描述： | 31.5 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA |
| 封裝： | TO-267, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 248K |
| 代理商： | APT6017WVR |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
N-CHANNEL MOSFET
T4-LDS-0178 Rev. 1 (101231)
Page 1 of 6
DEVICES
LEVELS
APT6017WVR
TX, TXV, S
POWER MOS V
CUSTOM SCREENS
600V
31.5A
0.170
AVAILABLE
ABSOLUTE MAXIMUM RATINGS (T
C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
600
Vdc
Gate – Source Voltage
VGS
± 30
Vdc
Continuous Drain Current
TC = +25°C
ID1
31.5
Adc
Max. Power Dissipation
TC = +25°C
Ptl
450 (1)
W
Drain to Source On State Resistance
Rds(on)
0.170 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Lead temperature: 0.063” from Case for 10 Se.
TL
300
°C
I AR
31.5
Adc
Avalanche Current (3) (Repetitive/ Non-repetitive)
EAR
50
mJ
EAS
2500
mJ
Note: (1) Derated Linearly by 3.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 15.75A
(3) Repetitive Rating: Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
600
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VGS(th)1
2.0
4.0
Vdc
Gate Current
VGS = ±30V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 600V
VGS = 0V, VDS = 480V, Tj = +125°C
IDSS1
IDSS2
25
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 15.75A pulsed
rDS(on)
0.170
Ω
Diode Forward Voltage
VGS = 0V, ID = 31.5A pulsed
VSD
1.3
Vdc
TO-267
D
S
G
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