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參數(shù)資料
| 型號： | APT6013JLL |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 中文描述： | 電源MOS 7TM是一個低損耗，高電壓，N溝道增強型功率MOSFET的新一代。 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 69K |
| 代理商： | APT6013JLL |
DYNAMIC CHARACTERISTICS
APT6013JLL
0
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
38.0 (1.496)
14.9 (.587)
11.8 (.463)
8.9 (.350)
Hex Nut M4
0.75 (.030)
12.6 (.496)
25.2 (0.992)
1.95 (.077)
* Source
Drain
Gate
*
r = 4.0 (.157)
4.0 (.157)
W=4.1 (.161)
(4 places)
3.3 (.129)
* Source
Source terminals are shorted
internally. Current handling
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Peak Diode Recovery
dv
/
dt 5
INFORMATION
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
GS
= 15V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
R
G
= 0.6
W
MIN
TYP
MAX
5640
1010
63
129
30
58
16
11
29
5
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
39
156
1.3
690
15.9
8
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 3.29mH, R
G
=
25
W
, Peak I
L
= 39A
5 dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
￡
-
I
[
]
di
/
dt
￡
700A/μs
V
R
￡
V
DSS
T
J
￡
150
°
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.27
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
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| APT6013LLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6013LFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6013JFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6015B2VFR | POWER MOS V FREDFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT6013JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6013JVR | 功能描述:MOSFET N-CH 600V 40A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT6013LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6013LFLLG | 功能描述:MOSFET N-CH 600V 43A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT6013LLL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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