參數(shù)資料
型號： APT6011B2VR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。
文件頁數(shù)： 2/2頁
文件大?。?/td> 34K
代理商： APT6011B2VR
ADVINFORMATION
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Fall Time
APT6011B2VFR
MAX
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D
[Cont.] @ 25
°
C
GS
= 15V
DD
= 0.5 V
DSS
= I
D
[Cont.] @ 25
°
C
G
= 0.6
MIN
TYP
8310
990
390
370
51
156
17
16
63
6
UNIT
pF
nC
ns
MIN
TYP
MAX
49
196
1.3
5
300
600
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
2.0
6.8
15
27
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.20
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
0
15.49 (.610)
5.38 (.212)
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
Gate
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Drain
Source
Dimensions in Millimeters and (Inches)
D
These dimensions are equal to the TO-247AD without mounting hole
.
T-MAX
Package Outline
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
4
Starting T
j
=
+25
°
C, L = 2.49mH, R
G
=
25 , Peak I
L
= 49A
5
I
S
I
D
[Cont.],
di
/
dt
= 100A/μs, T
j
150
°
C, R
G
= 2.0 , V
R
= 200V.
相關(guān)PDF資料
PDF描述
APT6011LVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6011LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6013B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6013B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6013JLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT6011B2VR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6011B2VRG 功能描述:MOSFET N-CH 600V 49A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT6011LVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6011LVFRG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube
APT6011LVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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