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參數(shù)資料
| 型號(hào)： | APT5518BFLL |
| 元件分類： | JFETs |
| 英文描述： | 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | APT5518BFLL |
APT5518 BFLL - SFLL
050-7197
Rev
A
3-2003
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
550
0
10
20
30
40
50
0
20
40
60
80
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
126
50
10
1
16
12
8
4
0
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
5
10
152025
30
35 404550
60
50
40
30
20
10
0
1000
800
600
400
200
0
Crss
Ciss
Coss
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ =+150°C
TJ =+25°C
VDS=275V
VDS=110V
VDS=440V
I
D
= 31A
V
DD
= 367V
R
G
= 5
T
J
= 125°C
L = 100H
tr
tf
td(on)
td(off)
V
DD
= 367V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
V
DD
= 367V
I
D
= 31A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
Eon
Eoff
V
DD
= 367V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
OPERATIONHERE
LIMITEDBYRDS(ON)
10,000
1,000
100
10
200
100
10
1
60
50
40
30
20
10
0
1000
800
600
400
200
0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT551R3BN-GULLWING | 7.5 A, 550 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT551R6BN | 6.5 A, 550 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT601R6BN-BUTT | 6.5 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT601R3BN-BUTT | 7.5 A, 600 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT551R6BN-BUTT | 6.5 A, 550 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT5518BFLLG | 功能描述:MOSFET N-CH 550V 31A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT5518SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT551R2AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 7A I(D) | TO-3 |
| APT551R2BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | TO-247AD |
| APT551R2DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | CHIP |
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