參數(shù)資料
型號： APT5518BFLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 94K
代理商： APT5518BFLL
DYNAMIC CHARACTERISTICS
APT5518 BFLL - SFLL
050-7197
Rev
A
3-2003
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -31A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -31A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -31A, di/dt = 100A/s)
Peak Recovery Current
(IS = -31A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
31
124
1.3
15
Tj = 25°C
250
Tj = 125°C
400
Tj = 25°C
1.9
Tj = 125°C
6
Tj = 25°C
15
Tj = 125°C
26
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.31
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.71mH, RG = 25, Peak IL = 31A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
31A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 275V
I
D
= 31A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 275V
I
D
= 31A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 367V, V
GS
= 15V
I
D
= 31A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 367V V
GS
= 15V
I
D
= 31A, R
G
= 5
MIN
TYP
MAX
3286
625
31
67
26
34
15
11
37
11
339
190
585
227
UNIT
pF
nC
ns
J
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
相關PDF資料
PDF描述
APT5518BFLL 31 A, 550 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT551R3BN-GULLWING 7.5 A, 550 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT551R6BN 6.5 A, 550 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT601R6BN-BUTT 6.5 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT601R3BN-BUTT 7.5 A, 600 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
相關代理商/技術參數(shù)
參數(shù)描述
APT5518BFLLG 功能描述:MOSFET N-CH 550V 31A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT5518SFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
APT551R2AN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 7A I(D) | TO-3
APT551R2BN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | TO-247AD
APT551R2DN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 8A I(D) | CHIP
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*