參數(shù)資料
型號(hào)： APT53N60SC6
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 53 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D3PAK-3
文件頁數(shù)： 2/5頁
文件大小： 149K
代理商： APT53N60SC6
DYNAMIC CHARACTERISTICS
APT53N60B_SC6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature
2 Repetitive avalanche causes additional power losses that can be calculated as
PAV = EAR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specications and information contained herein.
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
10-5
10-4
10-3
10-2
0.1
1
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Symbol Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
Input Capacitance
V
GS = 0V
V
DS = 25V
f = 1 MHz
4020
pF
C
oss
Output Capacitance
3545
C
rss
Reverse Transfer Capacitance
330
Q
g
Total Gate Charge 4
V
GS = 10V
V
DD = 300V
I
D = 53A @ 25°C
154
nC
Q
gs
Gate-Source Charge
26
Q
gd
Gate-Drain ("Miller") Charge
82
t
d(on)
Turn-on Delay Time
INDUCTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 53A @ 125°C
R
G = 4.3Ω
14
ns
t
r
Rise Time
36
t
d(off)
Turn-off Delay Time
151
t
f
Fall Time
74
E
on
Turn-on Switching Energy 5
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 53A, RG = 4.3Ω
960
μJ
E
off
Turn-off Switching Energy
873
E
on
Turn-on Switching Energy 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 53A, RG = 4.3Ω
1478
E
off
Turn-off Switching Energy
995
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
I
S
Continuous Source Current (Body Diode)
46
Amps
I
SM
Pulsed Source Current 1 (Body Diode)
159
V
SD
Diode Forward Voltage 3 (V
GS = 0V, IS = -53A)
0.9
1.2
Volts
dv
/
dt
Peak Diode Recovery dv/
dt
6
15
V/ns
t
rr
Reverse Recovery Time
(I
S = -53A,
di
/
dt = 100A/μs)
T
j = 25°C
795
ns
Q
rr
Reverse Recovery Charge
(I
S = -53A,
di
/
dt = 100A/μs)
T
j = 25°C
25
μC
I
RRM
Peak Recovery Current
(I
S = -53A,
di
/
dt = 100A/μs)
T
j = 25°C
58
Amps
Symbol
Characteristic
MIN
TYP
MAX
UNIT
R
θJC
Junction to Case
0.30
°C/W
R
θJA
Junction to Ambient
40
050-7206
Rev
B
8-2010
相關(guān)PDF資料
PDF描述
APT54H50L 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT54H50B2 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
APT5510B2FLL 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5510B2FLLG 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5510LFLL 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT54GA60B 功能描述:IGBT 600V 96A 416W TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT54GA60BD30 功能描述:IGBT 600V 96A 416W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT54GA60S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT
APT54GA60SD30 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT
APT55-101DN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17.5A I(D) | CHIP
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*