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參數(shù)資料
| 型號： | APT53N60BC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 53 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 149K |
| 代理商： | APT53N60BC6 |
050-7206
Rev
B
8-2010
Typical Performance Curves
APT53N60B_SC6
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
0
50
100
150
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50 -25
0
25
50 75 100 125 150
0
0.50
1.00
1.50
2.00
2.50
3.00
0
30
60
90
120
150
0
10
20
30
40
50
60
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
15V
V
GS = 20V
T
J= 25°C
T
J= -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
I C
,DRAIN
CURRENT
(A)
T
J= 125°C
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
I D
,DRAIN
CURRENT
(A)
T
C, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
I D
,DRAIN
CURRENT
(A)
I
D, DRAIN CURRENT (A)
FIGURE 4, R
DS(ON) vs Drain Current
T
J, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
T
C, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
V
GS
(TH),
THRESHOLD
VOL
TAGE
(NORMALIZED)
0
0.50
1.00
1.50
2.00
2.50
-50
0
50
100
150
T
J, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
R
DS(ON)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
(NORMALIZED)
4.5V
5.5V
5V
V
GS = 10V
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 26.5A
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
0.1
1
10
100
1000
1
10
100
800
1ms
100s
100ms
10ms
6.0V
6.5V
7.0V
10V
R
DS(on)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
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| APT53N60SC6 | 53 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APT5510B2FLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT53N60SC6 | 制造商:Microsemi Corporation 功能描述:APT53N60SC6 - Bulk |
| APT54GA60B | 功能描述:IGBT 600V 96A 416W TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT54GA60BD30 | 功能描述:IGBT 600V 96A 416W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT54GA60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT54GA60SD30 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
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