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參數(shù)資料
| 型號： | APT50M80LVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 94K |
| 代理商： | APT50M80LVR |
DYNAMIC CHARACTERISTICS
APT50M80B2VR_LVR
050-5916
Rev
A
12-2003
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 1.78mH, RG = 25, Peak IL = 58A
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 58A @ 25°C
V
GS
= 15V
V
DD
= 250V
I
D
= 58A @ 25°C
R
G
= 0.6
MIN
TYP
MAX
8797
1286
562
423
41
214
14
25
64
23
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -58A)
Reverse Recovery Time (I
S
= -58A, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -58A, dl
S
/dt = 100A/s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
58
232
1.3
680
17.0
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.20
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
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參數(shù)描述 |
|---|---|
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| APT50M85B2VFRG | 功能描述:MOSFET N-CH 500V 56A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT50M85B2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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