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參數(shù)資料
| 型號： | APT50M80LLC |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS VITM是一種低柵極電荷新一代高壓N溝道增強型功率MOSFET。 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | APT50M80LLC |
Diode Forward Voltage
2
GS
S
D[Cont.]
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
INFORMATION
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
D
= I
D[Cont.]
@ 25
°
C
G
= 0.6
MIN
TYP
MAX
6060
1220
230
170
31
89
12
13
34
7.1
UNIT
pF
nC
ns
APT50M80JLC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
MIN
TYP
MAX
52
208
1.3
680
17.0
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25
°
C, L = 2.22mH, R
G
=
25
,
Peak I
L
= 52A
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.25
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
31.5 (1.240)
7.8 (.307)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
11.8 (.463)
8.9 (.350)
9.6 (.378)
Hex Nut M4
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
* Emitter
Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
(2 places)
H=4.8 (.187)
(4 places)
3.3 (.129)
* Emitter
Source terminals are shorted
capability is equal for either
SOT-227 (ISOTOP
) Package Outline
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M80LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
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| APT50M80LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M80LVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT50M85B2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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