- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366571 > APT50M80B2LC (Advanced Power Technology Ltd.) Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. PDF資料下載
參數(shù)資料
| 型號： | APT50M80B2LC |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS VITM是一種低柵極電荷新一代高壓N溝道增強(qiáng)型功率MOSFET。 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 36K |
| 代理商： | APT50M80B2LC |
ADVINFORMATION
S
D[Cont.]
S
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25
°
C, L = 1.78mH, R
G
=
25 , Peak I
L
= 58A
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Collector
Emitter
Gate
Collector
Emitter
Gate
C
C
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.762.79 (.110)
3.18 (.125)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
5.38 (.212)
(.14.50
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
TO-264 (L) Package Outline
T-MAX
(B2) Package Outline
These dimensions are equal to the TO-247 without the mounting hole.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
DYNAMIC CHARACTERISTICS
APT50M80 B2LC - LLC
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
DD
= 0.5 V
DSS
= 0.5 I
D[Cont.]
@ 25
°
C
GS
= 15V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25
°
C
G
= 0.6
MIN
TYP
MAX
6060
1220
230
170
31
89
12
13
34
7.1
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
MIN
TYP
MAX
58
232
1.3
680
17.0
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.20
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50M80JLC | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M80LLC | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M80LVFR | POWER MOS V |
| APT50M85B2VFR | WASHER FOR THE SPECTROL 534 SERIES POTENTIOMETER |
| APT50M85B2VR | NUT FOR THE SPECTROL 534 SERIES POTENTIOMETER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M80B2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VFR_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VFRG | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT50M80B2VR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) T-MAX |
| APT50M80B2VR_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。