參數(shù)資料
型號(hào): APT50M80
廠商: Advanced Power Technology Ltd.
英文描述: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述: 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 230K
代理商: APT50M80
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PDF描述
APT50M80B2VFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M80B2VR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M80LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT50M65B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
APT50M65B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50M80B2LC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
APT50M80B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V
APT50M80B2VFR_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V
APT50M80B2VFRG 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT50M80B2VR 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) T-MAX