參數(shù)資料
型號: APT50M75JLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 4/5頁
文件大小: 169K
代理商: APT50M75JLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
204
100
10
1
16
12
8
4
0
20,000
10,000
1,000
100
10
200
100
10
1
APT50M75 JLL
Crss
Ciss
Coss
VDS=250V
VDS=100V
VDS=400V
TJ =+150°C
TJ =+25°C
050-7001
Rev
E
9-2004
1
10
100
500
0
10
20
30
40
50
0
40
80
120
160
200
0.3
0.6
0.9
1.2
1.5
10mS
1mS
100S
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
I
D = 51A
100
90
80
70
60
50
40
30
20
10
1
2500
2000
1500
1000
500
0
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
0
5
10 15 20 25 30
35 40 45 50
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 333V
I
D = 51A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
V
DD = 333V
R
G = 5
T
J = 125°C
L = 100H
120
110
100
90
80
70
60
50
40
30
20
10
3000
2500
2000
1500
1000
500
0
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