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參數(shù)資料
| 型號： | APT50M75JLL |
| 元件分類： | JFETs |
| 英文描述： | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 169K |
| 代理商： | APT50M75JLL |
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
5
1015
20
2530
01
2
345
67
8
9
10
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
-50
-25
0
25
50
75 100 125 150
120
100
80
60
40
20
0
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
160
140
120
100
80
60
40
20
0
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
050-7001
Rev
E
9-2004
7.5V
6V
5.5V
6.5V
7V
8V
15 &10V
Typical Performance Curves
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON) vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT50M75 JLL
NORMALIZED TO
V
GS = 10V @ ID = 25.5A
I
D
= 25.5A
V
GS
= 10V
VDS> ID (ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0.0409
0.255
0.00361
0.0246F
0.406F
148F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
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