參數(shù)資料
型號: APT50GT120JU3
廠商: MICROSEMI CORP
元件分類: IGBT 晶體管
英文描述: 75 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, ISOTOP-4
文件頁數(shù): 1/7頁
文件大?。?/td> 505K
代理商: APT50GT120JU3
APT50GT120JU3
A
P
T
50G
T
120J
U
3–
R
ev
1
J
une
,2006
www.microsemi.com
1 - 7
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
IC1
TC= 25°C
75
IC2
Continuous Collector Current
TC= 80°C
50
ICM
Pulsed Collector Current
TC= 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
347
W
IFAV
Maximum Average Forward Current
Duty cycle=0.5
TC = 80°C
27
IFRMS
RMS Forward Current (Square wave, 50% duty)
34
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C
A
E
G
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP Buck chopper
Trench + Field Stop IGBT
A
C
G
E
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