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參數(shù)資料
| 型號： | APT50GS60BRDQ2(G) |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 607K |
| 代理商： | APT50GS60BRDQ2(G) |
0.0731
0.226
0.00606
0.260
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Figure 20, Transient Thermal Impedance Model
I
C, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
F
MAX
,OPERATING
FREQUENCY
(kHz)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
Figure 18, Maximum Forward Safe Operating Area
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
1
10
100
800
1
10
100
800
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
200
100
10
1
0.1
200
100
10
1
0.1
Scaling for Different Case & Junction
Temperatures:
I
C = IC(TC = 25°C)
*(T
J - TC)/125
T
J = 150°C
T
C = 25°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
T
J = 125°C
T
C = 75°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 4.7
75°C
100°C
0.3
0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
10-5
10-4
10-3
10-2
10-1
1.0
0
10 20 30 40 50
60 70 80
90
160
140
120
100
80
60
40
20
0
APT50GS60B_SRDQ2(G)
052-6300
Rev
A
8-2007
TYPICAL PERFORMANCE CURVES
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PDF描述 |
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| APT50GS60SRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2RG | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2R | 94 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120LRG | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GS60BRG | 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GS60SR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT50GS60SRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT50GS60SRDQ2G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT50GS60SRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
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