- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36717 > APT50GN120L2DQ2 (MICROSEMI POWER PRODUCTS GROUP) 134 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | APT50GN120L2DQ2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 134 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-264MAX, 3 PIN |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 226K |
| 代理商： | APT50GN120L2DQ2 |
050-7606
Rev
B
10-2005
APT50GN120L2DQ2(G)
TYPICAL PERFORMANCE CURVES
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
e1 SAC: Tin, Silver, Copper
TO-264MAX (L2) Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
Gate
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Collector (C
at
ho
de
)
Collector
(Cathode)
Emitter
(Anode)
4
3
1
2
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 33. Diode Test Circuit
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT10035LLL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GN120L2DQ2 | 134 A, 1200 V, N-CHANNEL IGBT |
| APT50GN60SDQ3(G) | 107 A, 600 V, N-CHANNEL IGBT |
| APT50GN60BDQ3(G) | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT50GN60SDQ3 | 107 A, 600 V, N-CHANNEL IGBT |
| APT50GN60BDQ3 | 107 A, 600 V, N-CHANNEL IGBT, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GN120L2DQ2G | 功能描述:IGBT 1200V 134A 543W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GN60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60BDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT50GN60BDQ2G | 功能描述:IGBT 600V 107A 366W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GN60BG | 功能描述:IGBT 600V 107A 366W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。