參數(shù)資料
型號: APT5040KFLL
廠商: Advanced Power Technology Ltd.
英文描述: POWER MOS 7 FREDFET
中文描述: 功率MOS 7 FREDFET
文件頁數(shù): 1/5頁
文件大?。?/td> 104K
代理商: APT5040KFLL
0
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
G
D
S
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT5040KFLL
500V 17A 0.400
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
. Power MOS 7
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-220 Package
FAST RECOVERY BODY DIODE
is a new generation of low loss, high voltage, N-Channel
by significantly lowering R
combines lower conduction and switching losses
POWER MOS 7
R
FREDFET
GDS
TO-220
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 8.5A)
Zero Gate Voltage Drain Current (V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
μA
nA
Volts
MIN
TYP
MAX
500
0.40
250
1000
±100
3
5
APT5040KFLL
500
17
68
±30
±40
250
2
-55 to 150
300
17
16
425
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參數(shù)描述
APT5040KFLLG 功能描述:MOSFET N-CH 500V 17A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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