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參數(shù)資料
| 型號(hào)： | APT5014B2FLC |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 37K |
| 代理商： | APT5014B2FLC |
ADVANCED
TECHNICAL
INFORMATION
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
500
37
0.140
250
2000
±100
35
APT5014
500
37
148
±30
±40
520
4.16
-55 to 150
300
37
35
1600
APT5014B2FLC
APT5014LFLC
500V 37A 0.140
W
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current 2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance 2 (V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
FREDFET
T-MAX
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
TO-264
050-5922
rev-
11-99
B2FLC
LFLC
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
iss and Crss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
Identical Specifications: T-MAX or TO-264 Package
Lower Gate Charge & Capacitance
Fast Recovery Body Diode
Easier To Drive
100% Avalanche Tested
Faster switching
相關(guān)PDF資料 |
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|---|---|
| APT5014LFLC | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264 |
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| APT5016SFLL | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5016SFLLG | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT5014B2LC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT5014B2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT5014B2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5014BFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT5014BFLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
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