參數(shù)資料
型號(hào): APT5010JVRU3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁(yè)數(shù): 7/7頁(yè)
文件大?。?/td> 418K
代理商: APT5010JVRU3
APT5010JVRU3
A
PT
5010J
V
R
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
7 – 7
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
ISOTOP is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Source
Gate
Drain
Anode
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APT5010JVRU3 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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