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參數(shù)資料
| 型號： | APT5010JLLU2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | ISOTOP Boost chopper MOSFET Power Module |
| 中文描述： | 1000V的集電極升壓斬波器MOSFET的功率模塊 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 476K |
| 代理商： | APT5010JLLU2 |
APT5010JLLU2
A
APT website – http://www.advancedpower.com
1 – 7
ISOTOP
Absolute maximum ratings
Symbol
V
DSS
Drain - Source Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Parameter
Max ratings
500
41
30
164
±30
100
378
41
50
1600
30
39
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
I
D
Continuous Drain Current
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
IF
AV
IF
RMS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
A
V
m
W
A
mJ
Duty cycle=0.5
Tc = 80°C
A
V
DSS
= 500V
R
DSon
= 100m max @ Tj = 25°C
I
D
= 41A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS 7
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP
Boost chopper
MOSFET Power Module
K
D
G
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT5010JLLU3 | ISOTOP Buck chopper MOSFET Power Module |
| APT5010LFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT5010LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5010LLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT5010JVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT5010JLLU3 | 功能描述:POWER MOD MOSFET 500V 41A SOT227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT5010JN | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 48A 4-Pin SOT-227 |
| APT5010JVFR | 功能描述:MOSFET N-CH 500V 44A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT5010JVR | 功能描述:MOSFET N-CH 500V 44A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT5010JVRU2 | 功能描述:MOSFET N-CH 500V 44A SOT227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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