參數(shù)資料
型號： APT5010B2FLLG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TMAX-3
文件頁數(shù)： 2/5頁
文件大?。?/td> 175K
代理商： APT5010B2FLLG
050-7028
Rev
D
9-2004
DYNAMIC CHARACTERISTICS
APT5010B2FLL_LFLL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -46A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -46A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -46A, di/dt = 100A/s)
Peak Recovery Current
(IS = -46A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
46
184
1.3
15
Tj = 25°C
280
Tj = 125°C
600
Tj = 25°C
2.28
Tj = 125°C
6.41
Tj = 25°C
15.7
Tj = 125°C
23.6
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.25
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 250V
I
D = 46A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 250V
I
D = 46A@ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 333V, VGS = 15V
I
D = 46A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 333V VGS = 15V
I
D = 46A, RG = 5
MIN
TYP
MAX
4360
895
60
95
24
50
11
15
25
3
545
510
845
595
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.51mH, RG = 25, Peak IL = 46A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID46A
di/dt ≤ 700A/s V
R ≤ 500V
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
相關PDF資料
PDF描述
APT5010B2FLL 46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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