參數(shù)資料
型號: APT47N60SCF
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁數(shù): 2/5頁
文件大?。?/td> 402K
代理商: APT47N60SCF
050-7237
Rev
A
12-2005
DYNAMIC CHARACTERISTICS
APT47N60BCF_SCF(G)
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
FINAL DATA SHEET WITH MOS 7 FORMAT
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 4 (V
GS = 0V, IS = -46A)
Peak Diode Recovery dv/
dt
7
Reverse Recovery Time
(I
S = -46A,
di/
dt = 100A/s)
Reverse Recovery Charge
(I
S = -46A,
di/
dt = 100A/s)
Peak Recovery Current
(I
S = -46A,
di/
dt = 100A/s)
Symbol
I
S
I
SM
V
SD
dv/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
46
115
1.2
40
210
350
2.0
5.4
18
28
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.30
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as
PAV = EAR*f
3 Starting T
j = +25°C, L = 36.0mH, RG = 25, Peak IL = 10A
APT Reserves the right to change, without notice, the specications and information contained herein.
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 5
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 46A @ 25°C
RESISTIVE SWITCHING
V
GS = 15V
V
DD = 380V
I
D = 46A @ 25°C
R
G = 3.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 46A, RG = 4.3
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 46A, RG = 4.3
4 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See gures 18, 20.
7 Maximum 125°C diode commutation speed = di/dt 600A/s
MIN
TYP
MAX
7290
1735
41
255
43
135
30
100
15
885
590
1270
725
UNIT
pF
nC
ns
J
相關(guān)PDF資料
PDF描述
APT47N60SCFG 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET
APT47N60BCF 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT47N65BC3 47 A, 650 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT5010B2VFR 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT5010B2VR 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT47N60SCFG 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction FREDFET
APT47N65BC3 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET
APT47N65BC3G 功能描述:MOSFET N-CH 650V 47A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT47N65SCS3G 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 47A TO-247
APT48M80B2 功能描述:MOSFET N-CH 800V 48A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件