參數(shù)資料
型號(hào): APT47N60SC3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 47 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁數(shù): 3/5頁
文件大?。?/td> 173K
代理商: APT47N60SC3
050-7144
Rev
E
4-2004
Typical Performance Curves
APT47N60BC3_SC3
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
4.5V
5V
5.5V
4V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
6V
6.5V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
0
10
20
304050
60
70
80
90
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
NORMALIZED TO
V
GS = 10V @ 23.5A
120
100
80
60
40
20
0
50
40
30
20
10
0
3
2.5
2.0
1.5
1.0
0.5
0
180
160
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
D = 47A
V
GS = 10V
0.0136
0.0289
0.0988
0.00308
0.00145
0.00948
Power
(watts)
Junction
temp. (
°C)
RC MODEL
0.158
0.231
Case temperature (°C)
相關(guān)PDF資料
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