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參數(shù)資料
| 型號(hào)： | APT44H60J |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 44 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 273K |
| 代理商： | APT44H60J |
SO
T-2
27
ISOTOP
file # E145592
"UL Recognized"
G
S
D
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die MOSFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
inlbf
Nm
Ratings
44
28
245
±30
1845
33
Min
Typ
Max
540
0.23
0.15
-55
150
2500
1.03
29.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Terminals and Mounting Screws.
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
V
Isolation
W
T
Torque
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
UPS
Welding
Solar inverters
Telecom rectiers
FEATURES
Fast switching with low EMI
Very Low trr for maximum reliability
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
APT44H60J
600V, 44A, 0.011 Max, trr ≤250ns
N-Channel Ultrafast Recovery FREDFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com
050-8147
Rev
A
6-2007
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