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參數(shù)資料
| 型號： | APT4016BVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | ECONOLINE: REC3-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component Recognised Certification- 3W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | APT4016BVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
TO-247AD Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
Gate
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Dimensions in Millimeters and (Inches)
D
1
5
10
50 100
400
.01
.05 .1
.5 1
5 10
50
0
40
80
120
160
200
0
0.5
1.0
1.5
2.0
2.5
3.0
APT4016/4018BN
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
200
100
10
1
.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
10,000
5,000
1,000
500
100
200
100
50
20
10
5
2
1
Ciss
Coss
Crss
TJ =+150
°
C
TJ =+25
°
C
VDS=80V
VDS=320V
VDS=200V
LIMITED BY R
DS
(ON)
APT4016BN
APT4016BN
APT4018BN
APT4018BN
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT4018BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4018HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT4020 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4020BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4020BVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT4016SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 31A I(D) | TO-263AB |
| APT4016SVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT4016SVFRG | 功能描述:MOSFET N-CH 400V 27A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT4018BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4018BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 29A I(D) | TO-247AD |
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