參數(shù)資料
型號： APT4015AVR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁數(shù)： 4/4頁
文件大?。?/td> 64K
代理商： APT4015AVR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50
100
400
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
APT4015AVR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
150
100
50
10
5
1
.5
.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
15,000
10,000
5,000
1,000
500
100
100
50
10
5
1
0
OPERATION HERE
LIMITED BY R
DS
(ON)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
Crss
Coss
Ciss
VDS=200V
VDS=320V
VDS=80V
TJ =+150
°
C
TJ =+25
°
C
10
μ
S
1mS
10mS
100mS
DC
100
μ
S
TO-3 (TO-204AE) Package Outline
22.23 (.875) Max.
6.35 (.250)
9.15 (.360)
Drain
(Case)
Source
Dimensions in Millimeters and (Inches)
Seating
Plane
7.92 (.312)
12.70 (.500)
1.52 (.060)
3.43 (.135)
1.47 (.058)
1.60 (.063)
(2-Places)
16.64 (.655)
17.15 (.675)
29.90 (1.177)
30.40 (1.197)
38.61 (1.52)
39.12 (1.54)
25.15 (0.990)
26.67 (1.050)
10.67 (.420)
11.18 (.440)
5.21 (.205)
5.72 (.225)
3.84 (.151)
4.09 (.161)
(2-Places)
Gate
相關(guān)PDF資料
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APT4016BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT4018BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT4016BN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT4016BNR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 31A I(D) | TO-247AD
APT4016BVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT4016BVFRG 功能描述:MOSFET N-CH 400V 27A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT4016BVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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