參數(shù)資料
型號(hào)： APT4014BVR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁(yè)數(shù)： 4/4頁(yè)
文件大小： 64K
代理商： APT4014BVR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50
100
400
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
APT4014BVR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
15,000
10,000
5,000
1,000
500
100
100
50
10
5
1
0
OPERATION HERE
LIMITED BY R
DS
(ON)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
D
Drain
Source
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
TO-247 Package Outline
Crss
Coss
Ciss
VDS=200V
VDS=320V
VDS=80V
TJ =+150
°
C
TJ =+25
°
C
10
μ
S
1mS
10mS
100mS
DC
100
μ
S
相關(guān)PDF資料
PDF描述
APT4014HVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT4015AVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT4016BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT4014HVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT4014SVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT4014SVFRG 功能描述:MOSFET N-CH 400V 28A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT4015AVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT4016BN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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