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| 型號： | APT33GF120LRD |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的快速IGBT是一種高壓IGBT的新一代。 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 141K |
| 代理商： | APT33GF120LRD |
PRELMNARY
Z
Θ
J
,
t
r
,
I
R
,
I
F
,
(
°
C
(
(
(
t
f
,
K
f
,
Q
r
,
(
(
(
V
f
,
(
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 4, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT33GF120B2RD/LRD
0
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTE:
P x Z +
C
J
=
DUTY FACTOR D=t
1 2
PEAK T
/
P
D
t
2
t
t
1
0
1
2
3
4
10
50
100
500
1000
0
200
400
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
T
J
=100
°
C
V
R
= 650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
T
J
= 100
°
C
V
R
= 650V
T
J
= 100
°
C
V
R
= 650V
T
J
=100
°
C
V
R
= 650V
I
F
=30A
t
rr
I
RRM
Q
rr
T
J
= -55
°
C
T
J
= 100
°
C
T
J
= 150
°
C
15A
30A
60A
15A
30A
60A
60A
30A
15A
V
fr
t
fr
T
J
= 25
°
C
t
rr
Q
rr
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT33GF120LRDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT33GF120LRDQ2G | 功能描述:IGBT 1200V 64A 357W TO264 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT33N90JCCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT33N90JCCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT33N90JCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
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