參數(shù)資料
型號(hào)： APT33GF120HR
廠商： Advanced Power Technology Ltd.
英文描述： The Fast IGBT is a new generation of high voltage power IGBTs
中文描述： 該快速I(mǎi)GBT是一種高壓IGBT的新一代
文件頁(yè)數(shù)： 8/8頁(yè)
文件大?。?/td> 141K
代理商： APT33GF120HR
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
APT33GF120B2RD/LRD
0
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30
μ
H
D.U.T.
+15v
-15v
0v
Vr
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
6
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
Figure 8, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM
)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
Emitter
(Anode)
Gate
C
(
C
(
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
3.00 (.118)
0.48 (.019)
2.59 (.102)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
3.12 (.123)
TO-264 Package Outline
T-MAX Package Outline
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT33GF120LRD 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 1.2KV 52A 3-Pin(3+Tab) TO-264
APT33GF120LRDQ2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED
APT33GF120LRDQ2G 功能描述:IGBT 1200V 64A 357W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT33N90JCCU2 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT33N90JCCU3 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
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