參數(shù)資料
型號(hào)： APT30M40B2VR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 116K
代理商： APT30M40B2VR
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 0.6
W
MIN
TYP
MAX
8500
1500
390
285
56
120
16
20
48
4
10200
2100
585
425
85
180
32
40
72
8
UNIT
pF
nC
ns
APT30M40 B2VR - LVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
MIN
TYP
MAX
76
304
1.3
530
11.5
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 870μH, R
G
=
25
W
, Peak I
L
= 76A
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z
q
J
,
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料
PDF描述
APT30M40LVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT30M40JVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT30M40JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT30M40LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT30M61BLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT30M40B2VRG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube
APT30M40JVFR 功能描述:MOSFET N-CH 300V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:*
APT30M40JVR 功能描述:MOSFET N-CH 300V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:*
APT30M40LVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT30M40LVFRG 功能描述:MOSFET N-CH 300V 76A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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